The j111 N-channel switch: An overview
This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.
J111 datasheet/specs
• Characteristic Max Units J111- J113 *MMBFJ111
• Gate-Source Breakdown Voltage IG = - 1.0 µA, VDS = 0 - 35 V
• ID (off) Gate-Source Cutoff Voltage VDS = 5.0 V, VGS = - 10 V 1.0 nA
• IGF Forward Gate Current 50 mA
• IGSS Gate Reverse Current VGS = - 15 V, VDS = 0 - 1.0 nA
• PD Total Device Dissipation Derate above 25°C
• RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W
• Symbol RθJC Thermal Resistance, junction to Case 125 °C/W
• Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
• VDG Drain-Gate Voltage 35 V
• VGS (off) Gate-Source Cutoff Voltage VDS = 5.0 V, ID = 1.0 µA J111
• VGS Gate-Source Voltage - 35 V
Hence, the J111 N-channel switch provides reliability, durability, and safety without compromising quality and exceeding costs.
Source: Fairchild semiconductor corporation (see above)